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this is information on a product in full production. march 2013 docid022854 rev 4 1/20 20 stb45n65m5, stf45n65m5, STP45N65M5 n-channel 650 v, 0.067 typ., 35 a mdmesh? v power mosfet in d 2 pak, to-220fp and to-220 packages datasheet ? production data figure 1. internal schematic diagram features ? worldwide best r ds(on) * area ? higher v dss rating and high dv/dt capability ? excellent switching performance ? 100% avalanche tested applications ? switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. !-v $4!" ' 3 d 2 pa k to-220 to-220fp 1 3 2 tab 1 2 3 1 2 3 tab order codes v dss @ t jmax r ds(on) max i d stb45n65m5 710 v 0.078 35 a stf45n65m5 STP45N65M5 table 1. device summary order codes marking package packaging stb45n65m5 45n65m5 d 2 pak tape and reel stf45n65m5 to-220fp tube STP45N65M5 to-220 www.st.com
contents stb45n65m5, stf45n65m5, STP45N65M5 2/20 docid022854 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
docid022854 rev 4 3/20 stb45n65m5, stf45n65m5, STP45N65M5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak to-220 to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 35 35 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 22 22 (1) a i dm (1) drain current (pulsed) 140 140 (1) a p tot total dissipation at t c = 25 c 210 40 w dv/dt (2) 2. i sd 35 a, di/dt 400 a/s, v ds(peak) < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pak to-220fp to-220 r thj-case thermal resistance junction-case max 0.60 3.13 0.60 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb max 30 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 9a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 810 mj
electrical characteristics stb45n65m5, stf45n65m5, STP45N65M5 4/20 docid022854 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 17.5 a 0.067 0.078 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 3470 82 7 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 - 280 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -79-pf r g intrinsic gate resistance f = 1 mhz open drain - 2 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 17.5 a, v gs = 10 v (see figure 18 ) - 82 18.5 35 - nc nc nc
docid022854 rev 4 5/20 stb45n65m5, stf45n65m5, STP45N65M5 electrical characteristics table 7. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 23 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 79.5 11 9.3 16 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 35 140 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 35 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v (see figure 19 ) - 392 7.4 38 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 19 ) - 468 9.7 42 ns c a
electrical characteristics stb45n65m5, stf45n65m5, STP45N65M5 6/20 docid022854 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak and to- 220 figure 3. thermal impedance for d2pak and to-220 figure 4. safe operating area to220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am1 3 077v1 i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am1 3 07 8 v1 i d 60 40 20 0 0 10 v d s (v) 20 (a) 5 15 8 0 6v v g s =10v 10 3 0 50 70 7v 90 am1 3 0 8 0v1 i d 60 40 20 0 3 5 v g s (v) 7 (a) 4 6 8 8 0 9 10 3 0 50 70 v d s =25v 90 am1 3 0 8 1v1
docid022854 rev 4 7/20 stb45n65m5, stf45n65m5, STP45N65M5 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs. temperature figure 13. normalized on resistance vs. temperature v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =520v i d =17.5a 100 12 3 00 200 100 0 400 500 v d s v d s (v) am1 3 0 8 2v1 r d s (on) 0.067 0.065 0.06 3 0.061 0 15 i d (a) ( ) 10 20 0.069 0.071 v g s =10v 25 5 am1 3 0 83 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am1 3 0 8 4v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 12 500 600 14 16 am1 3 0 8 5v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am05459v2 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s =10v i d =17.5v am05460v2
electrical characteristics stb45n65m5, stf45n65m5, STP45N65M5 8/20 docid022854 rev 4 figure 14. drain-source diode forward characteristics figure 15. normalized v ds vs. temperature figure 16. switching losses vs. gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 3 00 200 100 0 0 20 r g ( ) ( j) 10 3 0 400 500 600 40 i d =2 3 a v dd =400v eon eoff v g s =10v am1 3 0 8 6v1
docid022854 rev 4 9/20 stb45n65m5, stf45n65m5, STP45N65M5 test circuits 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stb45n65m5, stf45n65m5, STP45N65M5 10/20 docid022854 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
docid022854 rev 4 11/20 stb45n65m5, stf45n65m5, STP45N65M5 package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb45n65m5, stf45n65m5, STP45N65M5 12/20 docid022854 rev 4 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
docid022854 rev 4 13/20 stb45n65m5, stf45n65m5, STP45N65M5 package mechanical data table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb45n65m5, stf45n65m5, STP45N65M5 14/20 docid022854 rev 4 figure 25. to-220fp drawing 7012510_rev_k_b
docid022854 rev 4 15/20 stb45n65m5, stf45n65m5, STP45N65M5 package mechanical data table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb45n65m5, stf45n65m5, STP45N65M5 16/20 docid022854 rev 4 figure 26. to-220 type a drawing 00159 88 _typea_rev_ s
docid022854 rev 4 17/20 stb45n65m5, stf45n65m5, STP45N65M5 packaging mechanical data 5 packaging mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb45n65m5, stf45n65m5, STP45N65M5 18/20 docid022854 rev 4 figure 27. tape for d2pak (to-263) figure 28. reel for d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
docid022854 rev 4 19/20 stb45n65m5, stf45n65m5, STP45N65M5 revision history 6 revision history table 13. document revision history date revision changes 22-feb-2012 1 first release. 28-aug-2012 2 document status promoted from preliminary data to production data. inserted section 2.1: electrical characteristics (curves) . 05-dec-2012 3 the part number stw45n65m5 has been moved to a separate datasheet. 05-mar-2013 4 ? added dv/dt value on table 2: absolute maximum ratings ? minor text changes
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